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CHA5010b
X Band Driver Amplifier
GaAs Monolithic Microwave IC Description
This CHA5010b is a two-stage monolithic driver amplifier. The circuit is manufactured with a standard MESFET process : via holes through the substrate, air bridges and electron beam gate lithography. It is available in chip form.
Vg
Vd
Main Features
| Broadband performance : 9-10.5GHz | 27dBm output power (pulsed meas., -1dB gain compression) | 15dB gain | 1.5dB gain flatness | Chip size : 2,09 x 1,27 x 0.10 mm
IN
OUT
Main Characteristics
Tamb. = 25C Symbol Fop G Pout Parameter Operating frequency range Small signal gain Output power (Pulsed meas., Pin = +13dBm) Min 9 14 26 15 27 Typ Max 10.5 Unit GHz dB dBm
ESD Protection : Electrostatic discharge sensitive device. Observe handling precautions !
Ref. : DSCHA50100096 - 05-Apr-00
1/4
Specifications subject to change without notice
United Monolithic Semiconductors S.A.S.
Route Departementale 128 - B.P.46 - 91401 Orsay Cedex France Tel. : +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
CHA5010b
Electrical Characteristics
Tamb = +25C, Vd = 8V, Vg = -1.5V Symbol
Fop G G P1db PAE VSWRin Id
X Band Driver Amplifier
(1)
Parameter
Operating frequency range Small signal gain @ Pin = +5dBm Small signal gain flatness Pulsed output power @ Pin = +13dBm Power added efficiency at saturation Input VSWR (2) Bias current
Min
9 14
Typ
Max
10.5
Unit
GHz dB dB dBm %
15 1.5
26
27 15 2.0:1 520
mA
(1) These values are representative of on-wafer pulsed measurements that are made without bonding wires at the RF ports. (2) Vd = 3.5V, Vg = -1.5V, [S] parameter measurements.
Absolute Maximum Ratings (1)
Tamb = +25C Symbol
Vd Pdiss Vg Pin Ta Tstg
Parameter
Positive supply voltage Maximum power dissipated Negative supply voltage Maximum peak input power overdrive (2) Operating temperature range Storage temperature range
Values
+10 7.0 @ Ta = +25C 4.3 @ Ta = +70C -3.5 to 0 +20 -25 to +70 -55 to +125
Unit
V W V dBm C C
(1) Operation of this device above anyone of these paramaters may cause permanent damage. (2) Duration < 1s.
Ref. : DSCHA50100096 - 05-Apr-00
2/4
Specifications subject to change without notice
Route Departementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
X Band Driver Amplifier
Typical On Wafer Scattering Parameters
Tamb = +25C, Bias Conditions : Vd = +3.5V, Vg = -1.5V Freq. GHz
2.00 2.50 3.00 3.50 4.00 4.50 5.00 5.50 6.00 6.50 7.00 7.50 8.00 8.50 9.00 9.50 10.00 10.50 11.00 11.50 12.00 12.50 13.00 13.50 14.00 14.50 15.00 15.50 16.00 16.50 17.00 17.50 18.00
CHA5010b
S11 dB
-5.35 -3.66 -2.44 -1.64 -1.23 -1.14 -1.35 -1.85 -2.76 -4.02 -5.77 -9.90 -30.64 -16.21 -17.14 -16.15 -14.23 -14.32 -12.68 -9.50 -7.26 -5.60 -4.23 -3.17 -2.32 -1.69 -1.28 -0.91 -0.69 -0.54 -0.43 -0.40 -0.38
S11 /
-109.2 -124.6 -139.2 -153.7 -168.0 178.2 164.6 150.7 136.2 121.9 103.0 70.0 -156.2 158.2 154.5 161.7 140.0 79.1 -4.8 -53.5 -78.7 -94.5 -106.5 -117.0 -126.3 -134.9 -142.7 -149.7 -155.9 -161.7 -166.8 -171.6 -175.6
S12 dB
-55.93 -49.08 -55.27 -65.52 -65.41 -66.55 -62.69 -63.21 -61.27 -52.79 -45.72 -38.39 -33.93 -34.35 -34.69 -34.10 -32.64 -32.41 -34.15 -37.14 -40.31 -43.56 -46.48 -49.61 -51.81 -54.83 -59.52 -62.73 -61.49 -68.06 -58.31 -58.30 -63.76
S12 /
-22.8 -104.8 146.9 -164.9 174.6 111.1 58.7 17.3 25.1 -30.6 -76.9 -139.7 139.3 72.7 26.2 -15.8 -63.2 -118.3 -174.5 140.8 103.6 69.4 44.1 13.0 -18.7 -53.3 -66.4 -147.8 170.2 127.7 125.2 126.4 97.9
S21 dB
-17.94 -12.92 -22.15 -32.08 -41.95 -55.23 -41.77 -24.61 -7.89 0.85 6.90 13.60 17.69 16.58 15.54 15.56 16.05 15.80 13.21 9.36 5.50 1.81 -1.77 -5.36 -8.95 -12.57 -16.24 -19.95 -24.09 -28.46 -33.59 -38.98 -45.29
S21 /
61.1 -13.8 -111.5 -148.9 173.3 170.7 -130.7 -130.4 177.7 102.2 45.0 -16.2 -100.9 -171.5 138.6 93.0 42.9 -15.8 -75.2 -123.9 -164.3 159.5 125.7 93.8 63.3 33.7 4.8 -24.0 -53.2 -82.7 -109.6 -136.5 -159.7
S22 dB
-0.89 -5.12 -1.14 -0.66 -0.79 -1.10 -1.69 -2.70 -4.52 -7.17 -9.17 -6.75 -7.63 -17.46 -10.44 -6.80 -5.52 -6.78 -9.67 -8.56 -6.54 -5.09 -4.02 -3.23 -2.58 -2.06 -1.66 -1.34 -1.07 -0.85 -0.69 -0.56 -0.45
S22 /
-113.5 -132.4 -127.3 -148.8 -166.6 175.7 157.1 135.3 107.9 70.7 6.2 -76.9 -155.2 -143.4 -121.2 -145.7 177.5 121.5 41.0 -26.9 -61.6 -81.6 -95.5 -105.9 -114.3 -121.6 -128.1 -134.2 -139.8 -145.0 -149.6 -154.0 -157.7
Ref. : DSCHA50100096 - 05-Apr-00
3/4
Specifications subject to change without notice
Route Departementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
CHA5010b
Chip Mechanical Data
X Band Driver Amplifier
74
426
990
456
74
Gnd 1120
Vg1
Vd 1270 35
IN 450
OUT 355 2090 35
UMS
All dimensions are in micrometers Pads : 100m x 100m Thickness: 100m 10m
Ordering Information
Chip form : CHA5010b99F/00
Information furnished is believed to be accurate and reliable. However United Monolithic Semiconductors S.A.S. assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of United Monolithic Semiconductors S.A.S.. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. United Monolithic Semiconductors S.A.S. products are not authorised for use as critical components in life support devices or systems without express written approval from United Monolithic Semiconductors S.A.S.
Ref. : DSCHA50100096 - 05-Apr-00
4/4
Specifications subject to change without notice
Route Departementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09

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